<3zmi-(2ondu<2toi ^p10 duct i, 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1106 description ? collector-emitter breakdown voltage- v(br)ceo= -140v(min) ? good linearity of hfe ? high power dissipation ? complement to type 2sc2581 applications ? designed for audio and general purpose applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value -140 -140 -6 -10 -4 100 150 -55-150 unit v v v a a w c r ft ^ , v 3 .' vk pin: lbase ". ^, , 2.ccllectct ?*vl ' ?. 3. emitter 1 2 3 tc-3pn package .m.,- *uqii r ;tuu ! *..- " h 1 t k b? * -c-? ^ , f- -s ->^, - - -; -?-*-j ?? --r dim a b c d e f g h j k l n q r s u y mm min 19.60 15.50 4,70 0,90 1.90 3.40 2.90 3.20 0.595 19.80 1.90 10.89 4.90 3.35 1.995 5.90 9.90 max 20.30 15.70 4,90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2,100 6.20 10.10 ?^ 4 g * ?l --? d ~?~n~?- nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of eoi. going to press. i lowever. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1106 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) icbo iebo hfe ft parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product conditions lc= -50ma; ib= 0 lc= -5a; ib= -0.5a vcb= -140v; ie= 0 veb= -6v; lc= 0 lc= -3a; vce= -4v ie=0.5a;vce=-12v min -140 30 typ. 20 max -2.0 -100 -100 unit v v ma u a mhz switching times tr tstg tf rise time storage time fall time lc=-5a, rl= 12q, !bi= -lb2= -0.5a, vcc= -60v 0.3 0.9 0.2 u s u s m s
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